SUD50P10-43L-GE3 数据手册

SUD50P10-43L-GE3

数据手册规格

数据手册名称 SUD50P10-43L-GE3
文件大小 75.292 千字节
文件类型 pdf
页数 9

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技术规格

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Vishay Intertech SUD50P10-43L-GE3
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 8.3W;136W
  • Total Gate Charge (Qg@Vgs): 160nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 4600pF@50V
  • Continuous Drain Current (Id): 37.1A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 43mΩ@10V,9.2A
  • Package: TO-252
  • Manufacturer: Vishay Intertech

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